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ECSE 433 Physical Basis of Transistor Devices (4 credits)

Note: This is the 2016–2017 edition of the eCalendar. Update the year in your browser's URL bar for the most recent version of this page, or click here to jump to the newest eCalendar.

Offered by: Electrical & Computer Engr (Faculty of Engineering)

Overview

Electrical Engineering : Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect transistors, metal-oxide semiconductor structures, static and dynamic behaviour, small-signal models. Laboratory experiments.

Terms: This course is not scheduled for the 2016-2017 academic year.

Instructors: There are no professors associated with this course for the 2016-2017 academic year.

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